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RQK0601AGDQS
Silicon N Channel MOS FET Power Switching
REJ03G0575-0400 Rev.4.00 Jun 22, 2006
Features
* Low on-resistance RDS(on) = 56 m typ (VGS = 10 V, ID = 2.5 A) * Low drive current * High speed switching * 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
2, 4 D 2 3 1G 4 S 3 1 1. Gate 2. Drain 3. Source 4. Drain
Note:
Marking is "AG". *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Symbol VDSS VGSS ID Ratings 60 20 5 7.3 5 1.5 5 150 -55 to +150 Unit V V A A A W W C C
Drain peak current ID (pulse)Note1 Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel dissipation Pch (pulse)Note1 Channel temperature Tch Storage temperature Tstg Notes: 1. PW 1 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Rev.4.00 Jun 22, 2006 page 1 of 6
RQK0601AGDQS
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 60 20 -- -- 1.0 -- -- 5.2 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 56 65 8.7 540 75 29 11 38 49 3.1 8.9 1.3 1.0 0.8 Max -- -- 10 1 2.0 70 91 -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 2.5 A, VGS = 10 VNote3 ID = 2.5 A, VGS = 4.5 VNote3 ID = 2.5 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 10 , Rg = 4.7
VDD = 10 V, VGS = 10 V, ID = 5A IF = 1.5 A, VGS = 0 Note3
Rev.4.00 Jun 22, 2006 page 2 of 6
RQK0601AGDQS
Main Characteristics
Maximum Channel Power Dissipation Curve
2.0 100 Operation in this area is limited by RDS(on) 10
1
Maximum Safe Operation Area
Channel Dissipation Pch (W)
1.5
Drain Current ID (A)
100 s
PW =
m s
1.0
1
10
D C O
m s
tio ra pe
0.5
0.1
Ta = 25C 1 Shot Pulse
n
0 0 25 50 75 100 125 150
0.01 0.01
0.1
1
10
100
Ambient Temperature Ta (C)
*When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
5
3V 2.8 V Pulse Test Tc = 25C 2.7 V 2.6 V 2.5 V
Typical Transfer Characteristics (1)
5 VDS = 10 V Pulse Test
Drain Current ID (A)
3
10 V 2.4 V
Drain Current ID (A)
4
5V 7 V, 9 V
4
3 Tc = 75C
2
2.3 V 2.2 V
2
1
2.1 V 2V VGS = 0 V
1
25C -25C
0
0
2
4
6
8
10
0 0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Gate to Source Cutoff Voltage VGS(off) (V)
Typical Transfer Characteristics (2)
1 VDS = 10 V Pulse Test
Case Temperature
10
Drain Current ID (A)
0.1
Tc = 75C
1 mA 1
ID = 10 mA
0.01 25C -25C 0.001
100 A
VDS = 10 V Pulse Test 0.1 -25 0 25 50 75 100 125 150
0.0001 0
0.5
1
1.5
2
2.5
3
Gate to Source Voltage VGS (V)
Case Temperature Tc (C)
Rev.4.00 Jun 22, 2006 page 3 of 6
RQK0601AGDQS
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current
Drain to Source Saturation Voltage VDS(on) (V)
Drain to Source on State Resistance RDS(on) ()
0.3 0.25 0.2 0.15 2A 0.1 0.05 0 0 1.5 A 1A 0.5 A 2 4 6 8 10 Pulse Test Tc = 25C
1 Pulse Test Tc = 25C
ID = 3 A
0.1
VGS = 10 V 4.5 V
0.01 0.1
1
10
100
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Case Temperature
Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature
Drain to Source on State Resistance RDS(on) (m)
200 Pulse Test VGS = 4.5 V 150 ID = 3 A 2A 100 1.5 A 1A 0.5 A
Drain to Source on State Resistance RDS(on) (m)
200 Pulse Test VGS = 10 V 150
100
ID = 0.5 A, 1 A, 1.5 A, 2 A, 3 A
50
50
0 -25
0
25
50
75
100 125 150
0 -25
0
25
50
75
100 125 150
Case Temperature Tc (C)
Case Temperature Tc (C)
100
Zero Gate Voltage Drain current IDSS (nA)
Forward Transfer Admittance vs. Drain Current
Zero Gate Voltage Drain current vs. Case Temperature
10000 1000 Pulse Test VGS = 0 V VDS = 60 V
Forward Transfer Admittance |yfs| (S)
Pulse Test VDS = 10 V Tc = -25C
10
25C 75C
1
100
10
1
0.1 0.1
1
Drain Current ID (A)
10
0.1 -25
0
25
50
75
100 125 150
Case Temperature Tc (C)
Rev.4.00 Jun 22, 2006 page 4 of 6
RQK0601AGDQS
Dynamic Input Characteristics Switching Characteristics
16
1000
Drain to Source Voltage VDS (V)
100 ID = 5.0 A Tc = 25C 80 VDD = 10 V 25 V 60 VDS 50 V
Gate to Source Voltage VGS (V)
12
Switching Time t (ns)
VGS
tf
100
VDD = 10 V VGS = 10 V Rg = 4.7 PW = 5 s Tc = 25C td(off)
8
40 VDD = 50 V 25 V 10 V 0 0 4 8 12 4
td(on)
10
20
tr
0 16
1 0.01
0.1
1.0
10
Gate Charge Qg (nC)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
10000 1000 VGS = 0 V f = 1 MHz 900 1000 Ciss
Input Capacitance vs. Gate to Source Voltage
Ciss, Coss, Crss (pF)
Ciss (pF)
Coss Crss
800
700 600 VDS = 0 V f = 1 MHz
100
10
0
20
40
60
500 -10
-5
0
5
10
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
5
Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage vs. Case Temperature
0.8 VGS = 0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 -25 1 mA ID = 10 mA
Pulse Test Tc = 25C 4 5V 3
2
VGS = 10 V
1
-10 V
0 V, -5 V 0.8 1.2 1.6 2.0
0
Body-Drain Diode Forward Voltage VSDF (V)
Reverse Drain Current IDR (A)
0
0.4
0
25
50
75
100 125
150
Source Drain Voltage VSD (V)
Case Temperature Tc (C)
Rev.4.00 Jun 22, 2006 page 5 of 6
RQK0601AGDQS
Package Dimensions
Package Name UPAK JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Previous Code UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
1.5 1.5 3.0
Ordering Information
Part Name RQK0601AGDQSTL-E Quantity 1000 pcs. Shipping Container 178 reel, 12 mm Emboss taping
Rev.4.00 Jun 22, 2006 page 6 of 6
0.8 Min
0.44 Max
(0.4)
0.53 Max 0.48 Max
(2.5)
1
2.5 0.1 4.25 Max
0.4
1.8 Max
1.5 0.1 0.44 Max
(1.5)
(0.2)
Sales Strategic Planning Div.
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